Includes bibliographical references and index.

Preface; Introduction; PART I: SEMICONDUCTOR PHYSICS; Energy Bands and Carrier Concentration in Thermal Equilibrium; Carrier Transport Phenomena; PART II: SEMICONDUCTOR DEVICES; p-n Junction; Bipolar Transistor and Related Devices; MOSFET and Related Devices; MESFET and Related Devices; Microwave Diodes, Quantum-Effect, and Hot-Electron Devices; Photonic Devices; PART III: SEMICONDUCTOR TECHNOLOGY; Crystal Growth and Epitaxy; Film Formation; Lithography and Etching; Impurity Doping; Integrated Devices; Appendix A: List of Symbols; Appendix B: International Systems of Units (SI Units); Appendix C: Unit Prefixes; Appendix D: Greek Alphabet; Appendix E: Physical Constants; Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K; Appendix G: Properties of Si and GaAs at 300 K; Appendix H: Derivation of the Density of States in Semiconductor; Appendix I: Derivation of Recombination Rate for Indirect Recombination; Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode; Appendix K: Basic Kinetic Theory of Gases; Appendix L: Answers to Selected Problems; Index

This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.