Semiconductor Devices, Physics and Technology /
Sze, S. M., 1936-
Semiconductor Devices, Physics and Technology / S.M. Sze. - 2nd ed. - New York : Wiley, c2002. - viii, 564 p. : ill. (some col.) ; 26 cm.
Includes bibliographical references and index.
Preface; Introduction; PART I: SEMICONDUCTOR PHYSICS; Energy Bands and Carrier Concentration in Thermal Equilibrium; Carrier Transport Phenomena; PART II: SEMICONDUCTOR DEVICES; p-n Junction; Bipolar Transistor and Related Devices; MOSFET and Related Devices; MESFET and Related Devices; Microwave Diodes, Quantum-Effect, and Hot-Electron Devices; Photonic Devices; PART III: SEMICONDUCTOR TECHNOLOGY; Crystal Growth and Epitaxy; Film Formation; Lithography and Etching; Impurity Doping; Integrated Devices; Appendix A: List of Symbols; Appendix B: International Systems of Units (SI Units); Appendix C: Unit Prefixes; Appendix D: Greek Alphabet; Appendix E: Physical Constants; Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K; Appendix G: Properties of Si and GaAs at 300 K; Appendix H: Derivation of the Density of States in Semiconductor; Appendix I: Derivation of Recombination Rate for Indirect Recombination; Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode; Appendix K: Basic Kinetic Theory of Gases; Appendix L: Answers to Selected Problems; Index
This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
0471333727 (cloth : alk. paper)
2001-026003
Semiconductors.
TK7871.85 / .S9883 2002
621.3815/2
Semiconductor Devices, Physics and Technology / S.M. Sze. - 2nd ed. - New York : Wiley, c2002. - viii, 564 p. : ill. (some col.) ; 26 cm.
Includes bibliographical references and index.
Preface; Introduction; PART I: SEMICONDUCTOR PHYSICS; Energy Bands and Carrier Concentration in Thermal Equilibrium; Carrier Transport Phenomena; PART II: SEMICONDUCTOR DEVICES; p-n Junction; Bipolar Transistor and Related Devices; MOSFET and Related Devices; MESFET and Related Devices; Microwave Diodes, Quantum-Effect, and Hot-Electron Devices; Photonic Devices; PART III: SEMICONDUCTOR TECHNOLOGY; Crystal Growth and Epitaxy; Film Formation; Lithography and Etching; Impurity Doping; Integrated Devices; Appendix A: List of Symbols; Appendix B: International Systems of Units (SI Units); Appendix C: Unit Prefixes; Appendix D: Greek Alphabet; Appendix E: Physical Constants; Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K; Appendix G: Properties of Si and GaAs at 300 K; Appendix H: Derivation of the Density of States in Semiconductor; Appendix I: Derivation of Recombination Rate for Indirect Recombination; Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode; Appendix K: Basic Kinetic Theory of Gases; Appendix L: Answers to Selected Problems; Index
This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
0471333727 (cloth : alk. paper)
2001-026003
Semiconductors.
TK7871.85 / .S9883 2002
621.3815/2