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_aTK7871.85 _bA495 2005 |
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_aAnderson, Betty Lise. _938164 |
|
245 | 1 | 0 |
_aFundamentals of semiconductor devices / _cBetty Lise Anderson, Richard L. Anderson |
260 |
_aBoston : _bMcGraw-Hill Higher Education, _cc2005. |
||
300 |
_axv, 800 p. : _bill. ; _c24 cm. |
||
504 | _aIncludes bibliographical references (p. 790-792) and index. | ||
505 | _aPart 1 Electronic Properties of Materials 1 Electron Energy and States in Semiconductors 2 Homogeneous Semiconductors 3 Current Flow in Homogeneous Semiconductors 4 Non-Homogeneous Semiconductors Part 2 Diodes 5 Prototype pn Homojunctions 6 Additional Considerations for Diodes Part 3 Field Effect Transistors 7 The MOSFET 8 Additional Considerations for FETs Part 4 Bipolar Transistors 9 Bipolar Junction Devices: Statics 10 Time-Dependent Analysis of BJTs Part 5 Optoelectronic Devices 11 Optoelectronic Devices Appendix A Physical Constants Appendix B List of Symbols Appendix C Fabrication Appendix D Density of States Function, Density of States Effective Mass, Conductivity Effective Mass Appendix E Useful Integrals Appendix F Useful Equations Appendix G: List of Suggested Readings. | ||
520 | _aFundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. With this emphasis, the reader will appreciate the underlying physics behind the equations derived and their range of applicability. The author's clear writing style, comprehensive coverage of the core material, and attention to current topics are key strengths of this book. | ||
650 | 0 |
_aSemiconductors. _92379 |
|
650 | 0 |
_aTransistors. _938165 |
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