000 02153cam a22002414a 4500
001 vtls000003701
003 VRT
005 20250102224235.0
008 081228s2005 maua |b 001 0 eng
020 _a0072369779
039 9 _a201402040119
_bVLOAD
_c201007200908
_dmalmash
_c200812280926
_dNoora
_c200812280923
_dNoora
_y200812280922
_zNoora
050 0 0 _aTK7871.85
_bA495 2005
100 1 _aAnderson, Betty Lise.
_938164
245 1 0 _aFundamentals of semiconductor devices /
_cBetty Lise Anderson, Richard L. Anderson
260 _aBoston :
_bMcGraw-Hill Higher Education,
_cc2005.
300 _axv, 800 p. :
_bill. ;
_c24 cm.
504 _aIncludes bibliographical references (p. 790-792) and index.
505 _aPart 1 Electronic Properties of Materials 1 Electron Energy and States in Semiconductors 2 Homogeneous Semiconductors 3 Current Flow in Homogeneous Semiconductors 4 Non-Homogeneous Semiconductors Part 2 Diodes 5 Prototype pn Homojunctions 6 Additional Considerations for Diodes Part 3 Field Effect Transistors 7 The MOSFET 8 Additional Considerations for FETs Part 4 Bipolar Transistors 9 Bipolar Junction Devices: Statics 10 Time-Dependent Analysis of BJTs Part 5 Optoelectronic Devices 11 Optoelectronic Devices Appendix A Physical Constants Appendix B List of Symbols Appendix C Fabrication Appendix D Density of States Function, Density of States Effective Mass, Conductivity Effective Mass Appendix E Useful Integrals Appendix F Useful Equations Appendix G: List of Suggested Readings.
520 _aFundamentals of Semiconductor Devices provides a realistic and practical treatment of modern semiconductor devices. A solid understanding of the physical processes responsible for the electronic properties of semiconductor materials and devices is emphasized. With this emphasis, the reader will appreciate the underlying physics behind the equations derived and their range of applicability. The author's clear writing style, comprehensive coverage of the core material, and attention to current topics are key strengths of this book.
650 0 _aSemiconductors.
_92379
650 0 _aTransistors.
_938165
942 _2lcc
_n0
_cBK
999 _c17006
_d17006